Impacts of SiC-MOSFET Gate Oxide Degradation on Three-Phase Voltage and Current Source Inverters
نویسندگان
چکیده
In this paper, the performance variations of SiC MOSFET-based voltage and current source inverters under gate oxide degradation are studied. It is confirmed that turn-on turn-off delays MOSFETs change significantly by high electric field stress, which accelerates degradation. Variations in switching devices extend or reduce duty error inverters. The inverter due to changes caused analyzed through simulations. As a result, worsens inverter. Furthermore, negative degradation, lowers threshold voltage, decreases
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ژورنال
عنوان ژورنال: Machines
سال: 2022
ISSN: ['2075-1702']
DOI: https://doi.org/10.3390/machines10121194